IPP028N08N3 G 全國供應(yīng)商、價格、PDF資料

IPP028N08N3 G詳細規(guī)格

類別：FET - 單

描述：MOSFET N-CH 80V 100A TO220-3

系列：OptiMOS™

制造商：Infineon Technologies

FET型：MOSFET N 通道，金屬氧化物

FET特點：邏輯電平門

漏極至源極電壓333Vdss444：80V

電流_連續(xù)漏極333Id4440a025000C：100A

開態(tài)Rds（最大）0a0IdwwwwVgs0a025000C：2.8 毫歐 @ 100A，10V

Id時的Vgs333th444（最大）：3.5V @ 270µA

閘電荷333Qg4440a0Vgs：206nC @ 10V

輸入電容333Ciss4440a0Vds：14200pF @ 40V

功率_最大：300W

安裝類型：通孔

封裝/外殼：TO-220-3

供應(yīng)商設(shè)備封裝：PG-TO220-3

包裝：管件

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